Title:
【発明の名称】進歩したソース/ドレイン構造用の階段状側壁スペーサ
Document Type and Number:
Japanese Patent JPH05504869
Kind Code:
A
Abstract:
Selective etching of a conformal nitride layer overlying a conformal oxide layer and a subsequent etching of the oxide layer provide for a staircase shaped sidewall spacer which is used to align source and drain regions during implantation. Extent of the implanted n-/n+ and/or p-/p+ regions within the substrate can be tightly controlled due to the tight dimensional tolerances obtained by the footprint of the spacer. Further the source/drain profiles can be utilized with elevated polysilicon and elevated polysilicon having subsequent salicidation.
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Inventors:
Manukonda, buoy., lady
Seidel, Thomas, Yi.
Seidel, Thomas, Yi.
Application Number:
JP50640691A
Publication Date:
July 22, 1993
Filing Date:
March 11, 1991
Export Citation:
Assignee:
Shimatech, Inc.
International Classes:
H01L21/336; H01L21/8238; H01L29/78; (IPC1-7): H01L21/336; H01L29/784
Domestic Patent References:
| JPH023935A | 1990-01-09 | |||
| JPS60225472A | 1985-11-09 |
Attorney, Agent or Firm:
Akira Asamura (3 outside)