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Patent Searching and Data


Title:
相補型電界効果トランジスタ
Document Type and Number:
Japanese Patent JPH061817
Kind Code:
B2
Abstract:
There is provided a complementary field effect transistor which includes an insulating substrate having a gate electrode formed thereon, a substantially intrinsic semiconductor thin film covering the insulating substrate such that the gate electrode is formed through the insulating substrate at one side of the intrinsic semiconductor thin film, an island p-type semiconductor thin film and an island n-type semiconductor thin film formed over the intrinsic semiconductor thin film, a first pair of electrodes formed over the p-type semiconductor thin film opposite the gate electrode, and a second pair of electrodes formed over the n-type semiconductor thin film, also, opposite the gate electrode on a same side of the intrinsic semiconductor thin film as the first pair of electrodes. A first electrode of each of the first and second pairs of electrodes are electrically connected with each other to form the complementary field effect transistor.

Inventors:
NISHIURA SHINJI
Application Number:
JP27743486A
Publication Date:
January 05, 1994
Filing Date:
November 20, 1986
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L27/092; H01L21/8238; H01L27/08; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L27/092; H01L27/08; H01L29/784
Attorney, Agent or Firm:
山口 巖