Title:
【発明の名称】半導体記憶装置とその製造方法
Document Type and Number:
Japanese Patent JPH07112016
Kind Code:
B2
Abstract:
PURPOSE:To omit a mask forming process for a semiconductor region for alpha-ray countermeasure and to prevent soft errors due to the alpha rays, by using a mask for forming a direct contact part, and forming the semiconductor region for alpha-ray countermeasure. CONSTITUTION:A p<-> type well region 2 is formed on the specified main surface part of a semiconductor substrate 1. A field insulating film 3 is formed at the specified parts of the semiconductor substrate 1 and the well region 2. A p-type channel stopper region 4 is formed at the specified part of the well region 2. An insulating film 5 is formed on the semiconductor substrate 1, which serves as a semiconductor-element forming region, and on the upper part of the main surface of the well region 2. A mask 19 for forming contact holes 6 at a direct contact part is formed. The mask 19 is used, to remove the insulating film 5 which is exposed through the mask. After the contact holes 6 at the direct contact part are formed, the mask 19 is removed. Conducting layers 7A-7D are formed on the field insulating film 3 and the insulating film 5. The conducting layers 7A-7D are connected to the main surface of the specified well region 2 through the contact holes 6.
Inventors:
Shuji Ikeda
Rei Meguro
Motoyoshi Makoto
Osamu Minato
Rei Meguro
Motoyoshi Makoto
Osamu Minato
Application Number:
JP18507786A
Publication Date:
November 29, 1995
Filing Date:
August 08, 1986
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L27/11; H01L21/8244; H01L27/10; (IPC1-7): H01L21/8244; H01L27/11
Domestic Patent References:
| JP5950561A | ||||
| JP6197963A | ||||
| JP6159867A |
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)