【発明の名称】AFM/STM/MFMのプロフィル測定用の精密機械センサ及びその製造方法 - International Business Machines Corporation

Title:

【発明の名称】AFM/STM/MFMのプロフィル測定用の精密機械センサ及びその製造方法

Document Type and Number:

Japanese Patent JPH0748349

Kind Code:

B2

Abstract:

A method for producing micromechanical sensors for the AFM/STM/MFM profilometry is described in which a multiple step mask of cantilever beam and tip is transferred step by step into the wafer substrate by reactive ion etching. A particular highly anisotropic etching step is used for etching and shaping of the tip. This process step uses an Ar/Cl2 ambient at a pressure of about 100 mu bar and a self bias voltage of about 300 V DC. The ratio of pressure to self bias voltage determines the concave shape of the tip sidewalls. This etching step is followed by a thermal oxidation step. The oxidation is carried out for a time until the oxidation fronts at the thinnest point of the tip shaft touch each other. A stripping process with buffered hydrofluoric acid gently removes the thermally grown oxide. The oxidation process allows - via oxidation time - a modification of tip height and angle in an extremely controllable manner. To prevent sticking of the tip to the structure to be profiled the ratio of tip diameter to tip height should be about 1 : 10. Should this ratio be exceeded the tip has to be arranged on a pedestal. The structure, comprising a cantilever beam and a tip on pedestal, can be produced with the same but slightly modified process of the invention.

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Inventors:

Thomas NM Buyer
Johann NGM Gresiner

Application Number:

JP13600791A

Publication Date:

May 24, 1995

Filing Date:

May 10, 1991

Export Citation:

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Assignee:

International Business Machines Corporation

International Classes:

B44C1/22; B81C1/00; C03C15/00; C23F4/00; G01B7/34; G01Q70/10; G01B21/30; G01Q60/04; G01Q60/08; G01Q60/16; G01Q60/38; G01Q70/16; H01J9/14; H01J37/00; H01J37/28; H01L21/306; (IPC1-7): H01J9/14; C23F4/00; G01B7/34; G01B21/30; H01J37/28

Domestic Patent References:

JP120428A
JP1132903A
JP1262403A

Other References:

【文献】米国特許4943719(US,A)

Attorney, Agent or Firm:

Koichi Tonmiya (1 person outside)

Next Patent: 高空間分解能ＣｓＩ蛍光膜の製造方法