Title:
【発明の名称】半導体薄膜の製造方法
Document Type and Number:
Japanese Patent JPH0754800
Kind Code:
B2
Abstract:
PURPOSE:To obtain an a-SiGe thin film having remarkably excellent light sensitivity by using a photodecomposing method. CONSTITUTION:Ultraviolet rays are emitted to a mixture gas of hydrogenated germanium and hydrogenated silicon in the presence of hydrogen, and silicon and germanium formed on a substrate are contained by a photodecomposition. The hydrogenated germanium is preferably diluted by helium and/or hydrogen, and the hydrogenated silicon is preferably diluted by helium and/or hydrogen. The ultraviolet rays are preferably emitted from a low pressure mercury lamp as a light source, and the photodecomposition is preferably performed by a mercury sensitizing method with the mercury lamp as a light source. The hydrogenated germanium effectively employs a germane represented by chemical formula GeH4.
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Inventors:
Nobuhiro Fukuda
Makoto Konagai
Kitagawa Junhisa
Makoto Konagai
Kitagawa Junhisa
Application Number:
JP4923085A
Publication Date:
June 07, 1995
Filing Date:
March 14, 1985
Export Citation:
Assignee:
Mitsui Toatsu Chemical Co., Ltd.
International Classes:
H01L31/04; H01L21/205; H01L21/263; (IPC1-7): H01L21/205
Domestic Patent References:
| JP58190955A | ||||
| JP57128022A | ||||
| JP5989407A |
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