Title:
【発明の名称】3C-SiC半導体装置の製造方法
Document Type and Number:
Japanese Patent JPH0815143
Kind Code:
B2
Inventors:
Shoichiro Matsumoto
Application Number:
JP24984786A
Publication Date:
February 14, 1996
Filing Date:
October 20, 1986
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L21/205; H01L21/203; H01L21/26; (IPC1-7): H01L21/203
Domestic Patent References:
| JP6212697A |
Other References:
【文献】第33回応用物理学会学術講演会講演予稿集(1986)P.6352P-T-7
Attorney, Agent or Firm:
Tono Kono
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