Title:
【発明の名称】共役重合体と受容体のヘテロ接合体;ダイオード、フォトダイオード及び光電池
Document Type and Number:
Japanese Patent JPH08500701
Kind Code:
A
Abstract:
This invention relates generally to the fabrication of heterojunction diodes from semiconducting (conjugated) polymers and acceptors such as, for example, fullerenes, particularly Buckminsterfullerenes, C60, and more particularly to the use of such heterojunction structures as photodiodes and as photovoltaic cells.
Inventors:
Sarishiftshi, N.S.
Heijer, Alan Jay.
Heijer, Alan Jay.
Application Number:
JP50652494A
Publication Date:
January 23, 1996
Filing Date:
August 17, 1993
Export Citation:
Assignee:
The Regents of the University of California
International Classes:
H01L31/10; G11C13/02; H01L29/267; H01L31/0256; H01L51/00; H01L51/05; H01L51/30; H01L51/42; (IPC1-7): H01L51/00; H01L31/10; H01L31/04
Attorney, Agent or Firm:
Atsushi Nakajima (5 people outside)