Document Type and Number:
Japanese Patent JPS4973086
Kind Code:
A
Abstract:
In a process for the production of circuits having at least one field effect transistor including a source, a drain, and a gate electrode, and having a resistor on a common substrate in which, starting with a substrate body having at least one field effect transistor, the process includes the formation of an enhancement type field effect transistor by ion implantation in the channel to decrease the starting voltage and the formation of the resistor by ion implantation adjacent the field effect transistor, wherein the resistor has a value which is high in comparison with the forward resistance of the conductive field effect transistor and low in comparison with the reverse resistance of the field effect transistor.
Application Number:
JP10641473A
Publication Date:
July 15, 1974
Filing Date:
September 20, 1973
Export Citation:
International Classes:
H01L27/04; H01L21/822; H01L27/07; H01L29/00; H01L29/78; (IPC1-7): H01L7/54