Document Type and Number:
Japanese Patent JPS5068077
Kind Code:
A
Abstract:
1444494 Charge coupled devices SIEMENS AG 9 Sept 1974 [12 Oct 1973] 39240/74 Heading H1K In a CCD for two phase operation the charge transfer electrodes consist of two interdigitated sets disposed over a first insulating layer on the semiconductor substrate through which transfer of charge takes place, the electrodes of the first set being covered with insulation while those of the second set each overlie a highly doped zone formed in the substrate. As described, Fig. 1, the substrate 1 is of N- or P-type silicon, the first insulating layer 2 of silicon dioxide and the electrodes 3, 5 of aluminium, tungsten, chromium, molybdenum or silicon. The insulation covering the first electrodes may be formed by anodically oxidizing the electrode material when this is aluminium or may be a layer of silicon dioxide 4 extending over the entire surface with the second set of electrodes 5 disposed on top of it. The highly doped zones 6 of the same conductivity type as the substrate are formed by diffusion from gas, or from a doped silicon or oxide layer or by ion implantation using the first electrode set as a mask, prior to provision of the overlying insulation.
Application Number:
JP11699774A
Publication Date:
June 07, 1975
Filing Date:
October 11, 1974
Export Citation:
International Classes:
H01L29/762; H01L21/339; H01L29/10; H01L29/768; (IPC1-7): G11C11/40; G11C17/00; H01L29/78
Domestic Patent References:
| JPS4830879A | 1973-04-23 | |||
| JPS4847234A | 1973-07-05 |