Document Type and Number:
Japanese Patent JPS5121793
Kind Code:
A
Abstract:
In a monolithic semiconductor integrated circuit, when polycrystalline semiconductor is used in a portion of substrate insulatively supporting plural semiconductor single crystal regions forming circuit elements, the oxidation process of the impurity diffusion process at high temperatures and in oxygen atmosphere is started after a passivation film such as silicon oxide or silicon nitride, to prevent oxygen from diffusing or penetrating into the surface of the polycrystalline semiconductor, has been formed on the same surface. By leaving the passivation film lying on that surface during the oxidation and diffusion process warping of the substrate that may be caused due to the diffusion or penetration of oxygen into the polycrystalline semiconductor region is prevented.
Inventors:
SUZUKI TAKAYA
YAGYU SETSURO
MIMURA AKIO
OKUHARA SHINJI
YAGYU SETSURO
MIMURA AKIO
OKUHARA SHINJI
Application Number:
JP9418374A
Publication Date:
February 21, 1976
Filing Date:
August 19, 1974
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/20; H01L21/223; H01L21/762; H01L21/764; (IPC1-7): H01L21/76