Document Type and Number:
Japanese Patent JPS5146381
Kind Code:
B1
Abstract:
1315573 Making semi-conductor devices RCA CORPORATION 1 Oct 1971 [12 Oct 1970] 45881/71 Heading H1K Masking bodies of silicon nitride, aluminium oxide, or aluminium silicate are formed on the surface of a silicon wafer at locations at which contact will later be made to diffused source and drain regions. The surface of the wafer and the masking bodies 52 are pyrolytically covered with a layer 54 of silicon dioxide which is etched with hydrofluoric acid to re-expose the masking bodies 52 and portions of the wafer surface. The exposed portions are oxidized to produce silicon dioxide films 58 which form the gate dielectrics of IGFETs. Hot phosphoric acid is used to remove the masking bodies 52 and a metal deposit is made (and selectively removed) to provide source, drain, and gate electrodes (not shown). The masking bodies 52 are initially formed from a continuous layer by etching with hot phosphoric acid following selective masking with silicon oxide, molybdenum, or platinum
Application Number:
JP8010271A
Publication Date:
December 08, 1976
Filing Date:
October 11, 1971
Export Citation:
International Classes:
H01L21/00; H01L21/32; H01L23/29; H01L23/485; H01L27/00; (IPC1-7): H01L21/302; H01L29/78