Document Type and Number:
Japanese Patent JPS5223231
Kind Code:
B2
Abstract:
1471355 Semi-conductor devices RCA CORPORATION 29 July 1974 [6 Aug 1973] 33314/74 Heading H1K A method of manufacturing a CMOSFET in an integrated circuit, comprises forming on a surface of a semi-conductor body 12, Fig. 9, of one conductivity type having a surface region of the opposite conductivity type, successive layers including a gate insulation 83, Fig. 2, a refractory conductor 84, and an oxygenimpermeable layer 85, removing portions of the layers 83-85 to leave a diffusion-masking layer comprising frames 86, 90 having crossbars 88, 93 defining openings 89, 94 over the region of one conductivity type and the opposite conductivity type respectively, depositing a solid source (96, 97), Fig. 3 (not shown), of conductivity modifiers on to the body 12 within the two openings in one frame and outside the other frame, and heating the body 12 to diffuse the conductivity modifiers from the solid source (96, 97) while simultaneously exposing the uncovered portions of the surface to a source of conductivity modifiers of the opposite type to those in the solid source (96, 97). The diffusion step forms the source and drain regions of the two FETs as well as guard bands (33, 67), Fig. 7 (not shown), therefor. A bar 95 is formed together with the frames 86, 90, and these are removed to leave at least the cross-bars 88, 93. A thermal silicon dioxide layer 38 is grown so that its surface is substantially co-planar with the cross-bars for supporting crossover conductors 82. Contact openings 46, 48, 76 and 80 are formed for the source and drain regions and the device is metallized by depositing aluminium to form conductors 50, 52, 54, 78 and 82. The semi-conductor may be B or P-doped Si, the gate electrode may be B or P-doped polysilicon, and the masking layers 83-85 may be silicon dioxide, polysilicon and silicon nitride.
Application Number:
JP9066474A
Publication Date:
June 22, 1977
Filing Date:
August 06, 1974
Export Citation:
International Classes:
H01L27/088; H01L21/00; H01L21/225; H01L21/336; H01L21/8234; H01L21/8238; H01L27/06; H01L29/00; H01L29/78