Document Type and Number:
Japanese Patent JPS5233476
Kind Code:
B2
Abstract:
A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds AIIBIVC2V, where AII are elements belonging to the second subgroup of group II: zinc and cadmium, BIV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C2V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.
Application Number:
JP6085275A
Publication Date:
August 29, 1977
Filing Date:
May 21, 1975
Export Citation:
International Classes:
H01J9/233; H01J1/34; H01J9/12; H01J40/06; H01L31/00