Document Type and Number:
Japanese Patent JPS5528262
Kind Code:
B2
Abstract:
A bidirectional semiconductor switch is provided with improved dV/dt capability by electrically connecting two thyristors in reverse parallel. A blocking circuit comprising at least one acoustic surface wave device is provided for electrically isolating the thyristors from each other and from a control circuit producing the control or gating signals for the thyristors. Electrical means such as ohmic leads enable the control signals outputted from the surface wave device to be separately fed to gate the thyristors. Preferably, a single acoustic surface wave device is utilized having a transmitter transducer positioned intermediate of two receiver transducers and capable of transmitting an acoustic surface wave in opposite directions through an insulator base member to the receiver transducers.
Application Number:
JP934075A
Publication Date:
July 26, 1980
Filing Date:
January 23, 1975
Export Citation:
International Classes:
H03H9/145; H01L29/74; H01L29/747; H02M1/08; H03H3/08; H03H9/76; H03K17/16; H03K17/722; H03K17/725