Document Type and Number:
Japanese Patent JPS561737
Kind Code:
B2
Abstract:
A semiconductor photocathode is described in which the electron emission is obtained from a P-type semiconductor into which free electrons are injected from the source or drain of an FET whose channel is normally blocked. Incident photons absorbed in the channel region unblock the FET causing electron emission. Preferably, the device comprises an imaging array of FET's and associated electron emitters.
Application Number:
JP10584673A
Publication Date:
January 14, 1981
Filing Date:
September 19, 1973
Export Citation:
International Classes:
H01J40/02; H01J1/34; H01J43/08; H01L21/00; H01L27/144; H01L27/146; H01L31/112; H01L31/153
Next Patent: DATA BASE SYSTEM