Document Type and Number:
Japanese Patent JPS5754324
Kind Code:
A
Abstract:
A plasma enhancing baffle plate (41) is employed in conjunction with the anode (3) of a reactive ion etching (RIE) system to provide uniform silicon etching. The baffle plate is conductively coupled to and provided in relatively close proximity to the anode to form a constricted chamber region (43) between anode and baffle plate. With the constricted chamber open to the RIE chamber through aperture means (41) in the baffle plate, the total surface area of the anode is increased, such that when the system is biased to operate in an RIE mode an increase in the generation of neutral etching species is effected. Various aperture arrangements may be employed to provide different patterns of neutral etching species generation, in accordance with the peculiar characteristics of the system employed.
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Inventors:
CHAARUZU JOSEFU HENDORITSUKUSU
UIRIAMU UOORESU HITSUKUSU
JON HAWAADO KERAA
UIRIAMU UOORESU HITSUKUSU
JON HAWAADO KERAA
Application Number:
JP11240781A
Publication Date:
March 31, 1982
Filing Date:
July 20, 1981
Export Citation:
Assignee:
IBM
International Classes:
H01L21/302; H01J37/32; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS5450440A | 1979-04-20 | |||
| JPS54128284A | 1979-10-04 | |||
| JPS5684478A | 1981-07-09 |