PURPOSE: To depict a micropattern with high precision using high speed electron beams and to obtain a photomask with high fidelity and high yield, by adding a nonionic polymer having low volume resistivity to an electron beam resist.

CONSTITUTION: A negative type electron beam resist having 109W1010ohm.cm is obtained by adding a 1W5wt% nonionic having ≤107 volume resistivity, such as polyvinyl alcohol to an about 1011ohm.cm volume resistivity resin, such as polyglycidyl methacrylate. A blank chromium plate is coated with a organic solvent soln. of this resist, after drying, it is prebaked to remove the solvent perfectly, and a micropattern is depicted with electron beams at high speed. Then, a resist pattern is formed by processing it with a liquid developr. Since a large amt. of charge is not accumulated in depicting the pattern with electron beams on the resist film, the beams are not extremely bent, and the pattern is formed with high precision.