Title:
【発明の名称】半導体記憶装置
Document Type and Number:
Japanese Patent JPS5810864
Kind Code:
B2
Abstract:
PURPOSE:To obtain a semiconductor memory which features a large strage capacity and a small memory cell area per bit, by distributing the information storage capacity in a 3-dimensional way.
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Inventors:
KOYANAGI MITSUMASA
SATO KIKUJI
SATO KIKUJI
Application Number:
JP7896776A
Publication Date:
February 28, 1983
Filing Date:
July 05, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G11C11/401; H01L21/8242; H01L27/10; H01L27/108; H01L29/78; (IPC1-7): H01L27/10; G11C11/34; H01L29/78
Attorney, Agent or Firm:
Toshiyuki Usuda