Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JPS58116778
Kind Code:
A
Abstract:
PURPOSE:To improve the power conversion efficiency of a photovoltaic device by arranging a generating layer which is made of amorphous semiconductor so that the optically forbidden band widths of the generating layers are sequentially decreased from the light incident side. CONSTITUTION:The first electrode 12 having a visible light transmitting property is formed on a transparent substrate 7. A plurality of generating layers 11a, 11b, 11c which are formed of amorphous semiconductor are so laminated as to sequentially decrease the optically forbidden band widths of the layers from the light incident side, thereby forming a semiconductor film 11. The second electrode 13 is formed on the film, thereby forming a plurality of genrating layers 8, 9, 10. Then, incident light energy effectively contributes to the generation in the region and relatively long wavelength side is not absorbed at the region in a relatively shallow depth, but effectively contributes to the generation in a relatively deep region.
Inventors:
YAMANO MASARU
SHIBUYA TAKASHI
SHIBUYA TAKASHI
Application Number:
JP21293981A
Publication Date:
July 12, 1983
Filing Date:
December 29, 1981
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04; H01L27/142; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Takuji Nishino