Title:
PLASMA DEVELOPMENT TYPE ELECTRONIC RESIST METHOD
Document Type and Number:
Japanese Patent JPS5811929
Kind Code:
A
Abstract:
The method comprises the steps of applying a coating of a negative electron resist film material comprising a mixture of an aliphatic vinyl base polymer having a relatively high plasma etch rate and a monomer having a relatively low plasma etch rate to a substrate; applying a coating of a barrier polymer film over said negative electron resist film to prevent vacuum sublimation of said monomer; exposing said negative electron resist film to an electron beam describing a predetermined pattern; removing said coating of barrier polymer; baking said resist film prior to development thereof; and developing said exposed resist pattern by plasma etching.
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Inventors:
JIYUEI EICHI REI
Application Number:
JP9323082A
Publication Date:
January 22, 1983
Filing Date:
June 02, 1982
Export Citation:
Assignee:
HONEYWELL INC
International Classes:
G03F7/36; C08F2/00; C08F291/00; G03F7/033; G03F7/038; G03F7/095; G03F7/11; G03F7/26; G03F7/38; H01L21/027; (IPC1-7): C08F2/52; C08F291/00; G03C1/68; G03C5/00; H01L21/30
Attorney, Agent or Firm:
Masaki Yamakawa