Title:
SUPPORT DEVICE FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS58128751
Kind Code:
A
Abstract:
PURPOSE:To permit semiconductor adsorbing force to build gradually by a method wherein a plurality of decompression valves are parallelly arranged in a decompression path coupling a decompression source and support members and the decompression valves are operated sequentially. CONSTITUTION:A plurality of three-way solenoid valves 18a, 18b,... are parallely inserted between a decompression source 16 and a decompression path 17 coupling the source 16 with a plurality of supports 15, 15b,... for semiconductor. In the valves 18a, 18b,... under normal conditions, the ports open to the atmosphere 18a', 18b',... communicate with the decompression path 17b. When in operations, a decompression path 17a communicates with the decompression path 17b. Accordingly, when the valves 18a, 18b,... are sequentially opened, a gradual decompression takes place via the decompression path 17b in paths 19a, 19b,... running through supports 15a, 15b,... Decompression gradually advances in support elements 21a, 21b,... enabling them to adsorb and support semiconductor substrates 24a, 25b,... The system being designed as such, semiconductor substrates are protected against damages.
Inventors:
SATOU MITSUO
TAKAKUWA YOSHITAROU
TAKAKUWA YOSHITAROU
Application Number:
JP1004382A
Publication Date:
August 01, 1983
Filing Date:
January 27, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/677; H01L21/683; (IPC1-7): H01L21/68
Attorney, Agent or Firm:
Noriyuki Noriyuki