Title:
【発明の名称】半導体物質の基体に対する細線の移動法
Document Type and Number:
Japanese Patent JPS5814737
Kind Code:
B2
Abstract:
Metal wires of widths as small as 10 microns are successfully migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. The metal wires are migrated to a preselected depth without use of oxide masking and/or etched grooves when the planar orientation of the surface of the body is (100).
Inventors:
TOOMASU RICHAADO ANSONII
HAABEI ERISU KURAIN
DAGURASU YUUJIN HAUSUTON
HAABEI ERISU KURAIN
DAGURASU YUUJIN HAUSUTON
Application Number:
JP16093376A
Publication Date:
March 22, 1983
Filing Date:
December 28, 1976
Export Citation:
Assignee:
GEN ELECTRIC
International Classes:
C30B19/00; C30B13/02; C30B13/06; C30B19/12; H01L21/208; H01L21/24; H01L21/761; H01L29/04; (IPC1-7): H01L21/208; H01L21/22
Attorney, Agent or Firm:
Kugoro Tamamushi