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Title:
ION SOURCE
Document Type and Number:
Japanese Patent JPS58163135
Kind Code:
A
Abstract:

PURPOSE: To stabilize the reduce an opening angle of an ion beam by a method wherein ion emission from a metal ion source is maintained for long hours while controlling the quantity of a substance to be ionized and working for stabilizing the region of a plasma ball.

CONSTITUTION: In a source 20 of a field emission fused metal ion, a pipe 21 to be made of a material, whose melting point is higher than that of a substance to be ionized, and having both open ends, is, for instance, made of tungsten. On the other hand, a chip 22 containing a metal, whose melting point is higher than that of a substance to be ionized, and being shorter than said pipe 21 as well as having a nearly conical tip 22, has porosity for transmitting the molten substance to be ionized, while being formed, for instance, by molding and sintering metal powder having a higher melting point than that of the substance to be ionized, through an appropriate medium. While the chip 22 is attached to the opening part of one end of said pipe 21 with its tip projected while the substance 32 to be ionized is put into the pipe 21.


Inventors:
OOKUBO MASAO
SUGAYA KIYOSHI
TAKAGI TOSHINORI
ISHIKAWA JIYUNZOU
Application Number:
JP4488482A
Publication Date:
September 27, 1983
Filing Date:
March 20, 1982
Export Citation:
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Assignee:
NIPPON DENSHI ZAIRYO KK
International Classes:
H01J37/08; H01J3/04; H01J27/26; H01J49/16; (IPC1-7): H01J3/04; H01J37/08; H01J49/16
Domestic Patent References:
JPS56131656U1981-10-06
Foreign References:
US3475636A1969-10-28
Attorney, Agent or Firm:
Koji Onishi



 
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