Title:
TREATMENT OF SUBSTRATE FOR THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPS58182835
Kind Code:
A
Abstract:
PURPOSE:To improve the electric characteristics of a polycrystalline material by performing grain boundary segregation, diffusion and particle growth at the same time by a method wherein atoms different from those of the polycrystalline material are diffused into a crystal grain boundary resulting in annealing. CONSTITUTION:When the atoms having atom radius different from that of a polycrystal, e.g. H2, He, O, etc. are diffused from a surface layer part, they are diffused to the inside at the grain boundary, and thus change the electric characteristics of the grain boundary. On the other hand, the particle growth is performed by laser annealing, etc., and accordingly the crystal growth is related with the improvement of element mobility. The use of this substrate enables to manufacture a MOS transistor insulated each other. In the figure, the numeral 21 represents a P type Si thin film base material, 22 a grain boundary region wherein oxygen is diffused, 23 a grain boundary region wherein oxygen is not diffused, 24 an N type diffused region, 25 glass or ceramics substrate, 26 an SiO2 evaporated film, and 27 a gate electrode.
Inventors:
KOBAYASHI KEIJI
Application Number:
JP6580782A
Publication Date:
October 25, 1983
Filing Date:
April 20, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/22; H01L21/324; (IPC1-7): H01L21/22
Attorney, Agent or Firm:
Takehiko Suzue