Title:
FLATTENING METHOD FOR PHOSPHORUS SILICATE GLASS FILM
Document Type and Number:
Japanese Patent JPS586138
Kind Code:
A
Abstract:
PURPOSE:To solve problems regarding the disconnection of Al wiring,the increase of diffusion length or the reduction of the phosphorus concentration of the PSG by flowing the PSG in steam gas exceeding atmospheric pressure. CONSTITUTION:A LOCOS oxide film 2, a gate oxide film 3 and a polycrystal silicon gate layer 4 with approximately 6,000Angstrom film thickness are formed onto a P type silicon substrate 1. The arsenic ions of the quantity of injection of 5X10<15>/cm<2> are injected at voltage such as the acceleration voltage of 160KeV, and diffusion layers 5 functioning as drain and source regions are coated. The PSG 6 of the phosphorus concentration of 8mol% is further coated. The PSG 6 is flowed in a high pressure oeve for 10min at 900 deg.C in the steam of the gas pressure of 8kg/cm<2>. Lastly, the PSG 6 is flowed in high-pressure steam, and the Al wiring 7 is formed, thus completing a MOS type transistor.
Inventors:
MAYUMI SHIYUUICHI
ASAHI KUNIHIKO
KAMEI ICHIZOU
ASAHI KUNIHIKO
KAMEI ICHIZOU
Application Number:
JP10416081A
Publication Date:
January 13, 1983
Filing Date:
July 02, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L29/78; H01L21/316; (IPC1-7): H01L29/78
Domestic Patent References:
| JPS57167633A | 1982-10-15 |
Attorney, Agent or Firm:
Toshio Nakao
Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE