Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5898931
Kind Code:
A
Abstract:
PURPOSE:To form a minute pattern readily, by forming a resist pattern on a heat resisting resin layer on a substrate by dry development, thereafter performing etching, thereby making all the processes dry. CONSTITUTION:A thin metal film 2 is formed on the glass substrate 1, and a polyimide resin is applied thereon as the heat resisting resin layer 6. Then an SiO2 thin film 7 is formed. A resist 3 is further applied. Then, with the resist pattern 4 as a mask, the SiO2 thin film 7 is etched. Thereafter, with a pattern 10 of the thin film 7 as a mask, the resin 6 is etched in the plasma in O2 gas. In this method, the pattern, which is very sharp and has a very large aspect ratio, can be obtained. Therefore, the etching of the thin chromium film 2 can be performed readily, and the sharp edges can be obtained.
Inventors:
TANAKA KAZUHIRO
YOSHIDA TSUNEO
YOSHIDA TSUNEO
Application Number:
JP19918581A
Publication Date:
June 13, 1983
Filing Date:
December 08, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/302; G03F7/09; H01L21/027; H01L21/3065; (IPC1-7): H01L21/30; H01L21/302
Attorney, Agent or Firm:
Shinichi Kusano