Title:
METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59117115
Kind Code:
A
Abstract:
The junctions of a plurality of semiconductor devices are formed in a common wafer. The upper surface of the common wafer is metallized for each of the individual devices by a nickel, chromium, nickel, silver metallizing system. Individual wafer elements are thereafter separated from the main wafer and their bottom surfaces are vacuum-alloyed to a molybdenum expansion plate. Thereafter, the outer periphery of the devices is tapered by grinding and the periphery is etched by hot potassium hydroxide without need to protect the upper metallizing from the etch. The caustic etch is washed with citric acid. Thereafter, the periphery is passivated by a passivation coating.
Inventors:
ANDAASU NAIRAAPU
HAABAATO JIEI GOURUDO
HAABAATO JIEI GOURUDO
Application Number:
JP23221683A
Publication Date:
July 06, 1984
Filing Date:
December 08, 1983
Export Citation:
Assignee:
INT RECTIFIER CORP
International Classes:
H01L21/28; H01L21/285; H01L21/306; H01L21/60; H01L21/78; (IPC1-7): H01L21/28
Domestic Patent References:
| JPS4534206B1 | ||||
| JPS5030426A | 1975-03-26 | |||
| JPS5633823A | 1981-04-04 | |||
| JPS53148966A | 1978-12-26 | |||
| JPS514968A | 1976-01-16 |
Attorney, Agent or Firm:
Teruo Akimoto