【発明の名称】MIS形半導体装置の製造方法

Title:

【発明の名称】MIS形半導体装置の製造方法

Document Type and Number:

Japanese Patent JPS605065

Kind Code:

B2

Inventors:

IWAMATSU SEIICHI
HIROBE YOSHIMICHI
TANIGAKI YUKIO

Application Number:

JP846176A

Publication Date:

February 08, 1985

Filing Date:

January 30, 1976

Export Citation:

Assignee:

HITACHI LTD

International Classes:

H01L21/265; H01L21/32; H01L21/321; H01L21/336; H01L29/417; H01L29/78; (IPC1-7): H01L29/78

Attorney, Agent or Firm:

Ogawa Katsuo

Next Patent: JPS605066