Document Type and Number:
Japanese Patent JPS6211832
Kind Code:
B2
Abstract:
PURPOSE:To enable the operation at low voltage and to increase S/N ratio through increased signal charge, by giving a device to a part of the light shield electrode provided just above the charge transfer element train. CONSTITUTION:Diffusion layers 2, 3 of opposite conduction type as the substrate 1 are formed on a semiconductor substrate 1. The diffusion layer 2 constitutes the source electrode of BBD transfer stage to transfer the electric charge and the diffusion layer 3 constitutes the photo diode for the photo sensing. Further, the substrate 1 is coated with the oxide film 4 for isolation. Further, the clock electrode to transfer the photoelectric conversion signal, the electrode 5 in common use with the gate electrode to read in the photoelectric conversion signal from the photo diode 3 to the electrode transfer stage, and the photo shield electrode 6 to the charge transfer stage, are provided. This electrode 6 has capacitive coupling with the photo diode 3, where the pulse signal having the in-phase relation to the pulse signal to drive the charge transfer element train is fed.
Inventors:
YOSHINO MASARU
WADA TAKAMICHI
NAKAYAMA MITSUO
TERUI YASUAKI
WADA TAKAMICHI
NAKAYAMA MITSUO
TERUI YASUAKI
Application Number:
JP2025180A
Publication Date:
March 14, 1987
Filing Date:
February 19, 1980
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L27/146; H01L27/148; H04N5/335; H04N5/341; H04N5/355; H04N5/359; H04N5/3728