Title:
半導体，半導体装置及び相補型トランジスタ回路装置
Document Type and Number:
Japanese Patent JPWO2008099863
Kind Code:
A1
Abstract:
半導体１と、第一の電極２と、半導体１及び第一の電極２間に設けられた絶縁体層３と、半導体１に接し第一の電極２と離間した第二の電極４と、半導体１に接し第一及び第二の電極２，４と離間した第三の電極５とを備え、半導体１が、有機半導体層１０と酸化物半導体層１１とを備えた。
Inventors:
Yano official rule
Nakanoya Hajime
Chihaya Adachi
Nakanoya Hajime
Chihaya Adachi
Application Number:
JP2008558109A
Publication Date:
May 27, 2010
Filing Date:
February 14, 2008
Export Citation:
Assignee:
IDEMITSU KOSAN CO.,LTD.
Kyushu University
Kyushu University
International Classes:
H01L29/786; H01L21/8238; H01L27/08; H01L27/092; H01L51/05; H01L51/30
Domestic Patent References:
| JP2006165532A | 2006-06-22 | |||
| JP2006502597A | 2006-01-19 | |||
| JPS58188165A | 1983-11-02 | |||
| JPH08228034A | 1996-09-03 | |||
| JPH09199732A | 1997-07-31 |
Attorney, Agent or Firm:
Kihei Watanabe