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Patent Searching and Data


Title:
レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤
Document Type and Number:
Japanese Patent JPWO2009044742
Kind Code:
A
Inventors:
Makoto Nakajima (Toyama-shi, Toyama Nissan Chemical Industries, Ltd. Inside of an electronic industry material research institute)
Hideo Suzuki (722-1, Tsuboi-cho, Funabashi-shi, Chiba-ken Nissan Chemical Industries, Ltd. Inside of a substance science laboratory)
Application Number:
JP2008067758W
Publication Date:
April 09, 2009
Filing Date:
September 30, 2008
Export Citation:
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Assignee:
Nissan Chemical Industries, Ltd. (3-7-1, Kandanishiki-cho, Chiyoda-ku, Tokyo)
International Classes:
H01L21/027; C07D303/38; C07C69/753; C07C61/13; C07C61/15; G03F7/11; C07C61/135
Attorney, Agent or Firm:
Tsutomu Kato
Yoshio Miyazaki
Kyoko Koyama
Sepal Tsuneo