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Patent Searching and Data


Title:
抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置
Document Type and Number:
Japanese Patent JPWO2009072201
Kind Code:
A
Inventors:
Noshiro Hideyuki
Application Number:
JP2007073545W
Publication Date:
June 11, 2009
Filing Date:
December 06, 2007
Export Citation:
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Assignee:
FUJITSU, LTD.
International Classes:
H01L45/00; H01L27/10; H01L49/00
Attorney, Agent or Firm:
Tadahiko Ito