Title:
窒化物半導体素子
Document Type and Number:
Japanese Patent JPWO2017038448
Kind Code:
A1
Abstract:
本技術の一実施形態の窒化物半導体素子は、第１半導体層と、第１半導体層の上に設けられた活性層と、活性層の上に設けられ、活性層から発せられた光を射出する射出窓を有する第２半導体層とを備え、第１半導体層または第２半導体層の側面には凹みまたは第１誘電体多層膜が少なくとも１つ形成されている。
Inventors:
Shoichiro Izumi
Noriyuki Kazedagawa
Dai Kuramoto
Tatsushi Hamaguchi
Noriyuki Kazedagawa
Dai Kuramoto
Tatsushi Hamaguchi
Application Number:
JP2017537715A
Publication Date:
July 05, 2018
Filing Date:
August 16, 2016
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01S5/022; H01L33/10; H01L33/32; H01L33/64; H01S5/183; H01S5/343
Domestic Patent References:
| JP2000022282A | 2000-01-21 | |||
| JP2011520272A | 2011-07-14 | |||
| JP2002217451A | 2002-08-02 | |||
| JP2014175565A | 2014-09-22 | |||
| JPS59145055U | 1984-09-28 |
Foreign References:
| WO2008018482A1 | 2008-02-14 |
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office
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