Document Type and Number:
Japanese Patent JPWO2021149151
Kind Code:
A1
Abstract:
A semiconductor wafer device according to the present invention includes a SiC substrate having an upper surface and a rear surface as a surface on the opposite side to the upper surface, and an impurity implantation layer provided on the entire rear surface of the SiC substrate, formed of a same base material as that forming the SiC substrate, including an impurity, and having a lower transmittance of visible light or infrared light than that of the SiC substrate.
Application Number:
JP2020528493A
Publication Date:
July 29, 2021
Filing Date:
January 21, 2020
Export Citation:
