Document Type and Number:
Japanese Patent JPWO2022059163
Kind Code:
A1
Abstract:
According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting a process chamber; a first gas supplier provided with a first supply port through which a first process gas is supplied; a second gas supplier provided with a second supply port through which a second process gas is supplied; a plasma generator provided along an outer circumference of the process vessel and configured to be capable of plasma-exciting the first process gas supplied into the process chamber; and a substrate mounting table on which a substrate is placed. The second supply port is provided at a supply pipe extending downward from a position in a ceiling surface of the process chamber located closer to a radial center of the process vessel than the first supply port, and is provided below the first supply port.
Application Number:
JP2022550286A
Publication Date:
March 24, 2022
Filing Date:
September 18, 2020
Export Citation:
Domestic Patent References:
| JP2012519956A | 2012-08-30 | |||
| JPH10219457A | 1998-08-18 | |||
| JP2019067503A | 2019-04-25 |
Foreign References:
| US20110198417A1 | 2011-08-18 | |||
| WO2017154245A1 | 2017-09-14 |
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