Document Type and Number:
Japanese Patent JPWO2023026887
Kind Code:
A1
Abstract:
[Problem] To provide a technique that enables the wet etching of a first silicon oxide film at a higher selectivity with respect to a metal film and a second silicon oxide film. [Solution] According to one embodiment, provided is a substrate processing method of wet-etching a substrate having a laminated structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a lower moisture content than the first silicon oxide film, the method comprising an etching step for supplying an etching liquid, obtained by diluting sulfuric acid, hydrogen peroxide, and hydrofluoric acid with an anhydrous organic solvent, to the substrate so that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid, and thereby performing etching by increasing the etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film.
Application Number:
JP2023543817A
Publication Date:
March 02, 2023
Filing Date:
August 15, 2022
Export Citation:
