Title:
SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE DRIVE METHOD, AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/044433
Kind Code:
A1
Abstract:
A CMOS sensor having a column-parallel ADC can execute a high-speed high-resolution
AD conversion. The CMOS image sensor (10) having the column-parallel ADC uses
reference voltages Vref1 to Vref4 and a reference voltage Vref5 having different
slope inclinations. The CMOS image sensor (10) includes: a comparison circuit
(32) which compares an output voltage Vx of a unit pixel (11) to the reference voltage
Vref 1 to Vref 4; and a comparison circuit (33) which compares the reference voltages
Vref1 to Vref4 to the reference voltage Vref5. The comparison circuit (32) and
the comparison circuit (33) are arranged in a column processing circuit (15).
By operating the comparison circuits (32, 33) and an up/down counter (34),
it is possible to execute a high-speed high-resolution AD conversion.
Inventors:
OIKE YUSUKE (JP)
Application Number:
PCT/JP2007/068078
Publication Date:
April 17, 2008
Filing Date:
September 18, 2007
Export Citation:
Assignee:
SONY CORP (JP)
OIKE YUSUKE (JP)
OIKE YUSUKE (JP)
International Classes:
H03M1/10; H03M1/56; H04N5/335; H04N5/369; H04N5/374; H04N5/376; H04N5/378
Foreign References:
| JP2005303648A | 2005-10-27 | |||
| JP2005311933A | 2005-11-04 | |||
| JP2003087664A | 2003-03-20 | |||
| JP2005303648A | 2005-10-27 |
Other References:
See also references of EP 2071831A4
Attorney, Agent or Firm:
IWASAKI, Sachikuni et al. (Toranomon Kotohira Tower2-8, Toranomon 1-chom, Minato-ku Tokyo, JP)
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