Title:
PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2010/038729
Kind Code:
A1
Abstract:
Provided is a plasma processing apparatus (100) wherein an electrode (7) embedded in a placing table (5) is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover (27) functioning as a counter electrode to the placing table (5) as an electrode, is coated with a protection film (48), preferably a Y2O3 film (48). A first portion (2) forming a lower side portion of the processing container (1) and a second portion (3) forming an upper side portion of the processing container (1) are provided with an insulating upper liner (49a) and an insulating lower liner (49b) formed thicker than the upper liner. Thus, undesirable short-circuits and abnormal electrical discharge are eliminated and stable high-frequency current path is formed.
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Inventors:
YAMASHITA JUN (JP)
ISA KAZUHIRO (JP)
NAKAMURA HIDEO (JP)
KITAGAWA JUNICHI (JP)
ISA KAZUHIRO (JP)
NAKAMURA HIDEO (JP)
KITAGAWA JUNICHI (JP)
Application Number:
PCT/JP2009/066925
Publication Date:
April 08, 2010
Filing Date:
September 29, 2009
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
YAMASHITA JUN (JP)
ISA KAZUHIRO (JP)
NAKAMURA HIDEO (JP)
KITAGAWA JUNICHI (JP)
YAMASHITA JUN (JP)
ISA KAZUHIRO (JP)
NAKAMURA HIDEO (JP)
KITAGAWA JUNICHI (JP)
International Classes:
H01L21/31; H01L21/3065; H05H1/46
Domestic Patent References:
| WO2006064898A1 | 2006-06-22 |
Foreign References:
| JP2001148372A | 2001-05-29 | |||
| JPH09120957A | 1997-05-06 | |||
| JP2007250568A | 2007-09-27 |
Attorney, Agent or Firm:
YOSHITAKE Kenji et al. (JP)
Kenji Yoshitake (JP)
Kenji Yoshitake (JP)
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