Title:
GROUP 13 NITRIDE CRYSTAL
Document Type and Number:
Japanese Patent JP2016164124
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a seed crystal for manufacturing a bulk crystal, applied to a group 13 nitride crystal substrate having a low dislocation density and a high quality.SOLUTION: The method for manufacturing a group 13 nitride crystal comprises: the crystal growth step of growing the group 13 nitride crystal having a hexagonal structure using a gallium nitride crystal having a hexagonal structure, a length L of 9.7 mm or more in the c axis direction and more than 0.813 of a ratio L/d of the length L to a crystal diameter d on the c plane as a seed crystal to manufacture the group 13 nitride crystal. The crystal growth step comprises: forming an outer peripheral surface including a {10-10} plane on the side surface of the crystal and an outer peripheral surface including a {10-11} plane; and forming an outer peripheral surface including a {0001} planes on the bottom surface of the crystal.SELECTED DRAWING: Figure 10-1
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Inventors:
HAYASHI MASAHIRO
SARAYAMA SHOJI
SATO TAKASHI
NANBU HIROSHI
KIMURA CHIHARU
MIYOSHI NAOYA
SARAYAMA SHOJI
SATO TAKASHI
NANBU HIROSHI
KIMURA CHIHARU
MIYOSHI NAOYA
Application Number:
JP2016118004A
Publication Date:
September 08, 2016
Filing Date:
June 14, 2016
Export Citation:
Assignee:
RICOH CO LTD
International Classes:
C30B29/38
Domestic Patent References:
| JP2009234906A | 2009-10-15 |
Attorney, Agent or Firm:
Hiroaki Sakai