13 fellows nitriding thing crystal, 13 fellows nitriding thing crystal base board, and a manufacturing method of 13 fellows nitriding thing crystal

Title:

13 fellows nitriding thing crystal, 13 fellows nitriding thing crystal base board, and a manufacturing method of 13 fellows nitriding thing crystal

Document Type and Number:

Japanese Patent JP6135080

Kind Code:

B2

Abstract:

A group 13 nitride crystal (19) having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations (P) in a cross section parallel to a c-axis is 10 4 cm -2 or more.

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Inventors:

Masahiro Hayashi
Takashi Sato
Kimura Chiharu
Naoya Miyoshi
Akishige Murakami
Shinsuke Miyake
Junichi Wada
Shoji Sarayama

Application Number:

JP2012203754A

Publication Date:

May 31, 2017

Filing Date:

September 17, 2012

Export Citation:

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Assignee:

株式会社リコー

International Classes:

C30B19/12; C30B29/38

Domestic Patent References:

JP2012012259A

Foreign References:

WO2009047894A1
WO2011044554A1

Attorney, Agent or Firm:

Hiroaki Sakai

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