To obtain green color luminescence from high-luminance blue color, and luminescence of various colors using only a 3 group nitride semiconductor device.
A light emitting diode 500 comprises a silicon on sapphire 1, a buffer layer 2, a high carrier concentration n+ layer 3, a n layer 4 composed of Al0.3 Ga0.7N Si dope, a light emitting layer 5, a p layer 61 composed of Al0.3 Ga0.7N Mg dope, a contact dope 62 composed of GaN Mg dope, an electrode 7 composed of Ni, and an electrode 8. The light emitting layer 5 is a quantum well structure and comprises alternately piled layers of a barrier layer 51 composed of about 100 membrane thickness Al0.25 Ga0.75N six layers, a well layer 52 composed of about 100 membrane thickness Al0.2 Ga0.8 N five layers. In the well layer 52, both zinc and silicon with 5 × 1018/cm 3 concentration each have been added. The light emitting layer 5 that emits such ultra-violet light, and a phosphor layer 208 that receives ultra-violet light emitted by the light emitting layer 5 and converts it into visible light on the electrode 7 are arranged.
KOIKE MASAYOSHI
AKASAKI ISAMU
AMANO HIROSHI
AKASAKI ISAMU
AMANO HIROSHI
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