To provide hydroxystyrene ABA type triblock copolymer, that is useful as a material for photosensitive resin components, excellent in resolution, electric insulation performance, thermal shock resistance, adhesion performance, etc., and suitable for inter-layer insulation film or surface protective film for semiconductor elements; and to provide a simple manufacturing method thereof.
The hydroxystyrene ABA type triblock copolymer comprises a segment A including hydroxystyrene repeating units a1 and a segment B including vinyl ether repeating units b, where a connected part of the segment A and the segment B is represented by a general formula (3) below, where (a) represents a coupling part to the segment A, and (b) represents a coupling part to the segment B. In the manufacturing method, polyvinyl ether having thiol group is used for a chain transfer agent at both terminal ends to cause radical polymerization with hydroxystyrene monomer.
MITA TAKAHITO
YOSHIDA NORIHIRO
SAWADA GORO
HABA KAZUHIKO
KAMATA AMI
JPH06116330A | 1994-04-26 | |||
JPS59189111A | 1984-10-26 | |||
JP2003342327A | 2003-12-03 | |||
JPH0892336A | 1996-04-09 |
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