To provide an abrasive pad of high quality, which is preferably used for chemical mechanical polishing (CMP) of a semiconductor wafer or the like, for example, not affected by change of polishing condition during polishing, and assures a superior polishing rate, elimination of steps, and uniformity on a surface.

A raw material of polyurethane or polyurea and various kinds of auxiliary materials are mixed, and a gas dissolved material which is obtained by dissolving an inert gas under a pressurized condition is formed into a polyurethane group foam 12 through a reactive injection forming method. The polyurethane group foam 12 which is provided with fine and uniform cells 20 suitable for polishing semiconductor materials or the like, is used for the abrasive pad.