Title:
ABRASIVE FOR SEMICONDUCTOR AND PRODUCTION OF THE SAME
Document Type and Number:
Japanese Patent JPH1112561
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To obtain the subject abrasive for providing few flaws to the surface of the insulating film of a polished semiconductor wafer, by including cerium oxide particles having a weight-average particle diameter and crystallite diameters in specific ranges. SOLUTION: This abrasive contains (A) cerium oxide particles having 0.1-0.35 μm weight-average particle diameter, 150-600 Åcrystallite diameter, preferably 9-55 m<2> /g specific surface area and <=10 ppm impurity sodium. Preferably the abrasive is obtained by suspending the component A in (B) an aqueous medium so as to give 0.1-20 wt.% [(the component A)/(the component A + the component B)×100] content and is used as an aqueous suspension. Preferably the proliferation of microorganisms of the aqueous suspension can be prevented and the occurrence of inconvenience even in long-term preservation can be checked by suspending the component A in the component B and sterilizing the suspension. Irradiation with ultraviolet rays, preferably high-temperature heat treatment at 40-100 deg.C is preferable as the sterilization method.
Inventors:
AIHARA RYOHEI
ENDO KAZUAKI
TSUGITA KATSUYUKI
ENDO KAZUAKI
TSUGITA KATSUYUKI
Application Number:
JP11655698A
Publication Date:
January 19, 1999
Filing Date:
April 27, 1998
Export Citation:
Assignee:
SEIMI CHEM KK
International Classes:
B24B37/00; C09K3/14; H01L21/304; (IPC1-7): C09K3/14; B24B37/00; H01L21/304