Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3141855
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can reduce the number of processes until a through-hole formation process after gate electrode formation and can reduce a manufacturing cost of a semiconductor device.
SOLUTION: This method includes is provided a process for forming a photosensitive organic film 13 on a semiconductor board 11, a process for forming a light-shielding metal film 14 all over the photosensitive organic film 13, a process for applying a photoresist 15 over the entire light-shielding metal film 14, a process for removing a region on a gate electrode pad 12 of the photoresist 15 and a predetermined region of ohmic electrode formation, a process for etching the light-shielding metallic film 14 and exposing the photosensitive organic film 13, a process for exposing, a process for forming a through-hole 16 by developing the photosensitive organic film 13, a process for depositing ohmic metal 17 inside the through-hole 16, and a process for performing lift-off treatment for the ohmic metal 17 on the photosensitive organic film 13.
Inventors:
Kiyoshi Takahashi
Application Number:
JP28035898A
Publication Date:
March 07, 2001
Filing Date:
October 01, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/3205; H01L21/28; H01L21/338; H01L29/812; (IPC1-7): H01L21/3205; H01L21/28; H01L21/338; H01L29/812
Domestic Patent References:
| JP62293239A | ||||
| JP7288280A |
Attorney, Agent or Firm:
Masanori Fujimaki
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