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Title:
ACOUSTIC SENSOR AND MANUFACTURING METHOD OF ACOUSTIC SENSOR
Document Type and Number:
Japanese Patent JP2016127371
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an acoustic sensor which improves an impulse resistance performance without being restricted by semiconductor manufacturing technology and without reducing a sensitivity/noise performance, and a manufacturing method of the acoustic sensor.SOLUTION: In the acoustic sensor which detects acoustic vibrations by converting them into a change of electrostatic capacitance between a vibration electrode film 5 and a stationary electrode film 8, a stationary plate 7 is disposed by a semiconductor manufacturing process, and a frame wall 16 which surrounds the stationary plate and is formed in a bent shape at least partially is directly or indirectly coupled to a silicon substrate 3. In at least a part inside of the frame wall, there remain sacrifice layers 13 and 15 which are removed from the inside of the stationary plate in the semiconductor manufacturing process. Ruggedness on inside surfaces of the residual sacrifice layers is smaller than ruggedness of a sound hole shape reflected structure which is formed when removing the sacrifice layers by an etchant supplied from a plurality of acoustic holes 18 in the semiconductor manufacturing process and in which similar shapes of contours of the acoustic holes are continued.SELECTED DRAWING: Figure 3

Inventors:
UCHIDA YUKI
MOMOTANI KOJI
KASAI TAKASHI
Application Number:
JP2014265508A
Publication Date:
July 11, 2016
Filing Date:
December 26, 2014
Export Citation:
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Assignee:
OMRON TATEISI ELECTRONICS CO
International Classes:
H04R19/04; H04R31/00
Domestic Patent References:
JP2012028900A2012-02-09
JP2010155306A2010-07-15
Attorney, Agent or Firm:
Kazunobu Sera
Yoshiyuki Kawaguchi
Hiroyasu Kanai
Takehiko Sekine
Takeshi Nakamura
Katsuhiko Imahori
Hironobu Yazawa