To suppress deterioration in characteristics of a TFT including a semiconductor layer of an oxide semiconductor, without increasing the number of photo masks.
An active matrix substrate includes a plurality of matrix-like pixel electrodes P, a TFT 5 connected to each of the pixel electrodes P, and a plurality of source lines 15a extending in parallel with each other. The TFT 5 includes: a gate electrode 11a on an insulating substrate 10; a gate insulating film 12a covering the gate electrode 11a; an oxide semiconductor layer 13a provided on the gate insulating film 12a so as to overlap the gate electrode 11a; and a source electrode 17a and a drain electrode 17b which are connected to the oxide semiconductor layer 13a. A protective insulating film 14a covering the oxide semiconductor layer 13a is provided between the source and drain electrodes 17a, 17b and the oxide semiconductor layer 13a, each of the source lines 15a is formed of a metal material, and the source and drain electrodes 17a, 17b are formed of a material same as that of each of the pixel electrodes P.
KATSUI HIROMITSU
NISHIKI HIROHIKO
OTA AYAFUMI
MIZUNO YUJI
HARA TAKESHI
AIDA TETSUYA
SUZUKI MASAHIKO
TAKEI MICHIKO
NAKAGAWA OKIFUMI
HARUMOTO YOSHIMASA
| JP2007258675A | 2007-10-04 | |||
| JPH04130312A | 1992-05-01 | |||
| JP2006237586A | 2006-09-07 | |||
| JP2006100760A | 2006-04-13 | |||
| JP2007235102A | 2007-09-13 | |||
| JP2001196595A | 2001-07-19 | |||
| JP2008112136A | 2008-05-15 | |||
| JP2010041058A | 2010-02-18 |
| US20090155940A1 | 2009-06-18 |