Title:
ACTIVE MATRIX SUBSTRATE AND PRODUCTION OF ACTIVE MATRIX SUBSTRATE
Document Type and Number:
Japanese Patent JP3310321
Kind Code:
B2
Abstract:
PURPOSE: To prevent the deterioration in characteristics based on the generation of Joule heat of driving circuits constituted of thin-film transistors(TFTs) by depositing and forming a diamond thin film on a part of a substrate which allows the transmission of visible rays and forming plural transistors on. this diamond thin film.
CONSTITUTION: The driving circuits DDA, SDA constituted of thin film transistors(TFTs) for driving the picture element transistors and picture element diodes disposed in a display region DPA are constituted around the display region DPA. The driving circuits are constituted of the signal line side driving circuit DDA and scanning side driving circuit SDA for sending signals to data lines. The TFTs for buffer of the signal line side driving circuit DDA of the CMOS generates a large quantity of the Joule heat. The diamond thin film DNF is formed in the region constituting the driving circuits in order to diffuse this heat and the TFTs are formed thereon. As a result, the diamond has an extremely high thermal conductivity and has the capacity of the coolant for the TFTs.
Inventors:
Tsutomu Hashizume
Application Number:
JP4988592A
Publication Date:
August 05, 2002
Filing Date:
March 06, 1992
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
G02F1/136; G02F1/1368; H01L27/12; H01L29/786; (IPC1-7): G02F1/1368; H01L27/12
Domestic Patent References:
| JP2259729A | ||||
| JP60483A | ||||
| JP230697A | ||||
| JP3183695A | ||||
| JP468318A | ||||
| JP584180A |
Attorney, Agent or Firm:
Masataka Ueyanagi