To provide an active matrix type display apparatus and a manufacturing method for the same, in which a width of a frame is made narrow by improving connection strength between a thin film transistor (TFT) substrate and an opposite substrate without increasing manufacturing processes and degrading reliability.

A TFT substrate comprises at least; a first interlayer insulator film 6 composed of an inorganic material covering a gate electrode of a thin film transistor; a second interlayer insulator film 9 which covers wiring lines on the first interlayer insulator film and connection wire lines 8a for connecting to a driver; a planarization film 10 composed of an organic material such as an acrylic and epoxy compound; and a pixel electrode which is connected to the wire lines via a through hole. A concave section 14 is formed by removing a part of the planarization film 10 of a region other than the connection lines 8a of a seal region and the second interlayer insulator film 9 simultaneously with the formation of the through hole. The connection strength is improved by contacting sealant 30 to the first interlayer insulator film 6 composed of an inorganic material at a bottom part of the concave section 14.