Title:
ADDITIONAL CIRCUIT OF SEMICONDUCTOR VALVE
Document Type and Number:
Japanese Patent JPH02233016
Kind Code:
A
Abstract:
PURPOSE: To limit an overvoltage which can occur when a reverse current is abruptly broken by providing an additional circuit for gate turning-off thyristor having auxiliary branch paths which are connected in parallel with diodes and have auxiliary capacitors. CONSTITUTION: Auxiliary branch paths which contains auxiliary capacitors Cd and are connected in parallel with diodes Ds are added to an additional circuit. In order to maintain the inductances of the auxiliary branch paths as low as possible, the capacitors Cd are directly connected in parallel with the diodes Ds and spatially arranged near the diodes Ds as close as possible. When a gate is turned off, a saturation reactor Lk becomes an unsaturated state through a resistor Rk connected in parallel with the reactor Lk and, when the reactor Lk becomes the unsaturated state, the resistor Rk limits a reverse current to a fixed value, namely, further drops an overvoltage.
Inventors:
HANSU RAABAA
Application Number:
JP1343690A
Publication Date:
September 14, 1990
Filing Date:
January 22, 1990
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H03K17/73; H03K17/0814; (IPC1-7): H03K17/73
Attorney, Agent or Firm:
Tomimura Kiyoshi
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